SLKOR discrete semiconductor components Pin-to-Pin Equivalents

Mr. Li, the Semiconductor Technology Director at Tsinghua University and affiliated with Slkor Semiconductor（www.slkoric.com）, highlighted a key technical disparity between Insulated Gate Bipolar Transistor (IGBT) devices and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). He emphasized that the primary distinction lies in the incorporation of a P+ doped collector on the rear side of the IGBT chip.

The transition from MOSFET to IGBT encompasses significant advancements in both device design and processing technology thresholds. Firstly, concerning device design, the evolution towards advanced Field-Stop IGBTs (FS-IGBTs) necessitates the utilization of carrier enhancement and conductance modulation techniques. The modulation of conductance in IGBTs, achieved through hole injection, results in a trailing current during shutdown, impacting the shutdown loss (Eoff). Balancing the saturation voltage drop (Vce, sat) with Eoff entails extensive experimentation.

Furthermore, the addition of a back collector in IGBTs elevates the risk of second breakdown compared to MOSFETs. Consequently, enhancing the device's second breakdown characteristics and expanding the safe working area becomes imperative. Secondly, in terms of device processing technology, advanced IGBT fabrication entails intricate backside processing techniques, including laser annealing, high-energy ion implantation, and Taiko thinning technology. Moreover, maintaining high dimensional accuracy poses challenges, as wafer warpage often occurs post high-temperature processing, demanding precise alignment accuracy.

Slkor, with R&D facilities spanning Busan, Korea, Beijing, and Suzhou, China, primarily conducts wafer fabrication, chip sealing, and testing in China. Central warehouses and laboratories are centralized at the headquarters in Shenzhen, while cooperative partnerships extend globally, serving over 10,000 customers. Holding independent intellectual property rights and over a hundred invention patents, Slkor boasts a diverse portfolio comprising more than 2,000 product models. With a robust management system and streamlined workflow, Slkor has garnered a reputation for delivering quality services, leading to a rapid increase in brand awareness, reputation, and market share. Continuously innovating, Slkor introduces new products such as power management chips encompassing LDO, AC-DC, and DC-DC series, alongside various sensors and supporting services for customers, including general-purpose and high-speed photocouplers, passive crystals, and more.

Slkor PIN TO PIN alternative: 

slkor's diodes, transistors, ESD diodes, and TVS diodes can be equivalent to brands such as CJ, LRC, VISHAY, NXP, and ON:

slkor's SMAJ5.0A diode/transistor is equivalent to DIODES' SMAJ5.0A-13-F.

slkor's SMAJ5.0A and SMAJ33CA diodes/transistors are equivalent to DIODES' SMAJ5.0A-13-F and SMAJ33CA.

slkor's SMAJ33CA diode/transistor is equivalent to DIODES' SMAJ33CA-13-F.

slkor's SMAJ33CA and SMBJ5.0A diodes/transistors are equivalent to DIODES' SMAJ33CA-13-F and SMBJ5.0A-13-F.

slkor's SLESD03D6BU (DFN0603) TVS/ESD diode/transistor is equivalent to NXP's PESD3V3R1BSF.

slkor's SLESD03D6BU and SLESD0501BU TVS/ESD diodes/transistors are equivalent to NXP's PESD3V3R1BSF and PESD5V0F1BL.

slkor's MMBZ5V6AL (SOT-23) TVS/ESD diode/transistor is equivalent to ON Semiconductor's MMBZ5V6AL.

slkor's MMBZ5V6AL and MMBZ6V2AL TVS/ESD diodes/transistors are equivalent to ON Semiconductor's MMBZ5V6AL and MMBZ6V2AL.

slkor's MMBZ5V6AL and MMBZ6V8AL (SOT-23) TVS/ESD diodes/transistors are equivalent to ON Semiconductor's MMBZ5V6AL and MMBZ6V8AL.

slkor's diodes, transistors, ESD diodes, and TVS diodes can be equivalent to CJ, LRC, VISHAY, NXP, and ON brands.

slkor's SMBJ5.0A diode can be equivalent to VISHAY's SMBJ5.0A-E3.

slkor's SMBJ5.0A and SMAJ5.0A diodes can be equivalent to VISHAY's SMBJ5.0A-E3 and SMAJ5.0A-E3/61.

slkor's SMBJ15A diode can be equivalent to VISHAY's SMBJ15A-E3/52.

slkor's SMBJ15A and SMBJ36CA diodes can be equivalent to VISHAY's SMBJ15A-E3/52 and SMBJ36CA-E3/52.

slkor's MMBZ18VAL (SOT-23) diode can be equivalent to ON Semiconductor's MMBZ18VAL.

slkor's MMBZ18VAL and MMBZ27VAL diodes can be equivalent to ON Semiconductor's MMBZ18VAL and MMBZ27VAL.

slkor's SLESD03D6BU (DFN0603) and SLPESD5V0U1BL TVS/ESD diodes/transistors can be equivalent to NXP's PESD3V3R1BSF and PESD5V0U1BL.

slkor's SLESD03D6BU (DFN0603) and SLESD0501CM TVS/ESD diodes/transistors can be equivalent to NXP's PESD3V3R1BSF and PESD5V0S1BL.